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Ground-state exciton emission of InAs quantum dots produced by focused-ion-beam-directed nucleation

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Ground-state exciton emission of InAs quantum dots produced by focused-ion-beam-directed nucleation

Auteurs : RBID : Pascal:13-0052215

Descripteurs français

Pascal (Inist)
- Etat fondamental, Exciton, Arséniure d'indium, Point quantique, Technologie faisceau ion focalisé, Photoluminescence, Multicouche, Mesure puissance, Formation motif, Composé binaire, Composé minéral, Semiconducteur III-V, Arséniure de gallium, InAs, InAs/GaAs, GaAs, As In, As Ga, 7867H, 7855C, 7135.
Wicri :
- concept : Composé minéral.

English descriptors

KwdEn :
- Binary compounds, Excitons, Focused ion beam technology, Gallium arsenides, Ground states, III-V semiconductors, Indium arsenides, Inorganic compounds, Multilayers, Patterning, Photoluminescence, Power measurement, Quantum dots.

Abstract

We report on scanning micro-photoluminescence measurements on InAs quantum dots that were patterned using an in vacuo focused ion beam. The focused ion beam produced a square array of holes with an array spacing of 2 μm, upon which multiple layers of InAs and GaAs were deposited. Two-dimensional mapping of the luminescence spatially and spectrally resolves the emission from individual dots. At some positions, multiple emission peaks are observed, which could have originated from (i) different exciton transitions of the same quantum dot, or (ii) different quantum dots. Power dependence measurements reveal that the emission increases linearly with power, and maps of the emission show that the positions of each peak are spatially separated, suggesting that the peaks are ground-state exciton emission from different dots.

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Pascal:13-0052215

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Ground-state exciton emission of InAs quantum dots produced by focused-ion-beam-directed nucleation</title>
<author><name sortKey="Lee, J E" uniqKey="Lee J">J.-E. Lee</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physics, University of Michigan</s1>
<s2>Ann Arbor, MI 48109</s2>
<s3>USA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country>États-Unis</country>
<wicri:noRegion>Ann Arbor, MI 48109</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Saucer, T W" uniqKey="Saucer T">T. W. Saucer</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physics, University of Michigan</s1>
<s2>Ann Arbor, MI 48109</s2>
<s3>USA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>6 aut.</sZ>
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<country>États-Unis</country>
<wicri:noRegion>Ann Arbor, MI 48109</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Martin, A J" uniqKey="Martin A">A. J. Martin</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Materials Science and Engineering, University of Michigan</s1>
<s2>MI 48109</s2>
<s3>USA</s3>
<sZ>3 aut.</sZ>
<sZ>5 aut.</sZ>
</inist:fA14>
<country>États-Unis</country>
<placeName><region type="state">Michigan</region>
</placeName>
</affiliation>
</author>
<author><name sortKey="Tien, D" uniqKey="Tien D">D. Tien</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physics, University of Michigan</s1>
<s2>Ann Arbor, MI 48109</s2>
<s3>USA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>6 aut.</sZ>
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<country>États-Unis</country>
<wicri:noRegion>Ann Arbor, MI 48109</wicri:noRegion>
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<author><name sortKey="Millunchick, J M" uniqKey="Millunchick J">J. M. Millunchick</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Materials Science and Engineering, University of Michigan</s1>
<s2>MI 48109</s2>
<s3>USA</s3>
<sZ>3 aut.</sZ>
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<country>États-Unis</country>
<placeName><region type="state">Michigan</region>
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</author>
<author><name sortKey="Sih, V" uniqKey="Sih V">V. Sih</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physics, University of Michigan</s1>
<s2>Ann Arbor, MI 48109</s2>
<s3>USA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>6 aut.</sZ>
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<country>États-Unis</country>
<wicri:noRegion>Ann Arbor, MI 48109</wicri:noRegion>
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<publicationStmt><idno type="inist">13-0052215</idno>
<date when="2013">2013</date>
<idno type="stanalyst">PASCAL 13-0052215 INIST</idno>
<idno type="RBID">Pascal:13-0052215</idno>
<idno type="wicri:Area/Main/Corpus">001345</idno>
<idno type="wicri:Area/Main/Repository">000C46</idno>
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<seriesStmt><idno type="ISSN">0022-2313</idno>
<title level="j" type="abbreviated">J. lumin.</title>
<title level="j" type="main">Journal of luminescence</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Binary compounds</term>
<term>Excitons</term>
<term>Focused ion beam technology</term>
<term>Gallium arsenides</term>
<term>Ground states</term>
<term>III-V semiconductors</term>
<term>Indium arsenides</term>
<term>Inorganic compounds</term>
<term>Multilayers</term>
<term>Patterning</term>
<term>Photoluminescence</term>
<term>Power measurement</term>
<term>Quantum dots</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Etat fondamental</term>
<term>Exciton</term>
<term>Arséniure d'indium</term>
<term>Point quantique</term>
<term>Technologie faisceau ion focalisé</term>
<term>Photoluminescence</term>
<term>Multicouche</term>
<term>Mesure puissance</term>
<term>Formation motif</term>
<term>Composé binaire</term>
<term>Composé minéral</term>
<term>Semiconducteur III-V</term>
<term>Arséniure de gallium</term>
<term>InAs</term>
<term>InAs/GaAs</term>
<term>GaAs</term>
<term>As In</term>
<term>As Ga</term>
<term>7867H</term>
<term>7855C</term>
<term>7135</term>
</keywords>
<keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Composé minéral</term>
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<front><div type="abstract" xml:lang="en">We report on scanning micro-photoluminescence measurements on InAs quantum dots that were patterned using an in vacuo focused ion beam. The focused ion beam produced a square array of holes with an array spacing of 2 μm, upon which multiple layers of InAs and GaAs were deposited. Two-dimensional mapping of the luminescence spatially and spectrally resolves the emission from individual dots. At some positions, multiple emission peaks are observed, which could have originated from (i) different exciton transitions of the same quantum dot, or (ii) different quantum dots. Power dependence measurements reveal that the emission increases linearly with power, and maps of the emission show that the positions of each peak are spatially separated, suggesting that the peaks are ground-state exciton emission from different dots.</div>
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<fA08 i1="01" i2="1" l="ENG"><s1>Ground-state exciton emission of InAs quantum dots produced by focused-ion-beam-directed nucleation</s1>
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<fA11 i1="01" i2="1"><s1>LEE (J.-E.)</s1>
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<fA14 i1="01"><s1>Department of Physics, University of Michigan</s1>
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<sZ>4 aut.</sZ>
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<fC01 i1="01" l="ENG"><s0>We report on scanning micro-photoluminescence measurements on InAs quantum dots that were patterned using an in vacuo focused ion beam. The focused ion beam produced a square array of holes with an array spacing of 2 μm, upon which multiple layers of InAs and GaAs were deposited. Two-dimensional mapping of the luminescence spatially and spectrally resolves the emission from individual dots. At some positions, multiple emission peaks are observed, which could have originated from (i) different exciton transitions of the same quantum dot, or (ii) different quantum dots. Power dependence measurements reveal that the emission increases linearly with power, and maps of the emission show that the positions of each peak are spatially separated, suggesting that the peaks are ground-state exciton emission from different dots.</s0>
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<fC03 i1="04" i2="3" l="ENG"><s0>Quantum dots</s0>
<s5>04</s5>
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<s5>08</s5>
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<s5>76</s5>
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<s4>INC</s4>
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<s4>INC</s4>
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<s4>INC</s4>
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<s4>INC</s4>
<s5>81</s5>
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<fC03 i1="20" i2="3" l="FRE"><s0>7855C</s0>
<s4>INC</s4>
<s5>83</s5>
</fC03>
<fC03 i1="21" i2="3" l="FRE"><s0>7135</s0>
<s4>INC</s4>
<s5>84</s5>
</fC03>
<fN21><s1>035</s1>
</fN21>
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<pR><fA30 i1="01" i2="1" l="ENG"><s1>International conference on, Luminescence and optical spectroscopy, of condensed matter</s1>
<s2>16</s2>
<s3>Ann Arbor, Michigan USA</s3>
<s4>2011-06-27</s4>
</fA30>
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Ground-state exciton emission of InAs quantum dots produced by focused-ion-beam-directed nucleation

Ground-state exciton emission of InAs quantum dots produced by focused-ion-beam-directed nucleation

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri